The magnetic and structural properties of Co₂MnSi Heusler alloy thin films on the orientation of Ge substrateNAHID, M. A. I; OOGANE, M; NAGANUMA, H et al.Physica status solidi. A, Applications and materials science (Print). 2011, Vol 208, Num 3, pp 675-678, issn 1862-6300, 4 p.Article

Preparation of anionic clathrate-II K_24-xGe₁₃₆ by filling of Ge(cF136)BÖHME, Bodo; REIBOLD, Marianne; AUFFERMANN, Gudrun et al.Zeitschrift für Kristallographie. Crystalline materials. 2014, Vol 229, Num 10, pp 677-686, issn 2194-4946, 10 p.Article

Effect of surface Si redistribution on the alignment of Ge dots grown on pit-patterned Si(001) substratesCHEN, Hung-Ming; SUEN, Yuen-Wuu; CHEN, Sao-Jie et al.Nanotechnology (Bristol. Print). 2014, Vol 25, Num 47, issn 0957-4484, 475301.1-475301.6Article

Theoretical Investigation of Ge(100) Nitridation by Nitric Oxide: Monomeric or Dimeric Dissociation?JING HUI HE; WEI MAO; JING KUN GAO et al.Journal of physical chemistry. C. 2013, Vol 117, Num 33, pp 17111-17118, issn 1932-7447, 8 p.Article

Influence of SiGe layer thickness and Ge fraction on compressive strain and hole mobility in a SiGe-on-insulator substrate fabricated by the Ge condensation techniqueHAIGUI YANG; DONG WANG; NAKASHIMA, Hiroshi et al.Thin solid films. 2012, Vol 520, Num 8, pp 3283-3287, issn 0040-6090, 5 p.Conference Paper

Comparison of bismuth emitting liquid metal ion sourcesBISCHOFF, L; PILZ, W; MAZAROV, P et al.Applied physics. A, Materials science & processing (Print). 2010, Vol 99, Num 1, pp 145-150, issn 0947-8396, 6 p.Article

Enhancement of photoluminescence from germanium by utilizing air-bridge-type photonic crystal slabNAKAYAMA, Shigeru; IWAMOTO, Satoshi; ISHIDA, Satomi et al.Physica. E, low-dimentional systems and nanostructures. 2010, Vol 42, Num 10, pp 2556-2559, issn 1386-9477, 4 p.Conference Paper

Playing Pinball with AtomsSAEDI, Amirmehdi; VAN HOUSELT, Arie; VAN GASTEL, Raoul et al.Nano letters (Print). 2009, Vol 9, Num 5, pp 1733-1736, issn 1530-6984, 4 p.Article

ETUDE DE LA DIFFUSION DU GALLIUM ET DE L'ARSENIC DANS LE GERMANIUM LORS DE LA CROISSANCE EPITAXIALE SUR CELUI-CI DE L'ARSENIURE DE GALLIUMEHPIKTETOVA LE; VASIL'EVA LP; DRUZHINKIN IF et al.1973; IZVEST. VYSSH. UCHEBN. ZAVED., FIZ.; S.S.S.R.; DA. 1973; NO 1; PP. 93-99; BIBL. 12 REF.Serial Issue

Effect of heavy doping and strain on the electroluminescence of Ge-on-Si light emitting diodesSCHMID, Marc; OEHME, Michael; GOLLHOFER, Martin et al.Thin solid films. 2014, Vol 557, pp 351-354, issn 0040-6090, 4 p.Conference Paper

Enhanced Au induced lateral crystallization in electron-irradiated amorphous Ge on SiO₂SAKIYAMA, Shin; KANEKO, Takahiro; OOTSUBO, Takanobu et al.Thin solid films. 2014, Vol 557, pp 151-154, issn 0040-6090, 4 p.Conference Paper

Detrimental effects of atomic hydrogen on the formation of Schottky barriers in p-type GeKOLKOVSKY, Vl; KLEMM, S; ALLARDT, M et al.Semiconductor science and technology. 2013, Vol 28, Num 2, issn 0268-1242, 025007.1-025007.6Article

Boron doping compensation of hydrogenated amorphous and polymorphous germanium thin films for infrared detection applicationsMORENO, M; DELGADILLO, N; TORRES, A et al.Thin solid films. 2013, Vol 548, pp 533-538, issn 0040-6090, 6 p.Article

Effects of Ge Dopant on Thermoelectric Properties of Barium and Indium Double-Filled p-Type SkutteruditesJIAN YU; ZHAO, Wen-Yu; BING LEI et al.Journal of electronic materials. 2013, Vol 42, Num 7, pp 1400-1405, issn 0361-5235, 6 p.Conference Paper

Comparison and Contrast Analysis of Adsorption Geometries of Phenylalanine versus Tyrosine on Ge(100): Effect of Nucleophilic Group on the SurfaceSENA YANG; LIM, Heeseon; EUN HEE PARK et al.Journal of physical chemistry. C. 2012, Vol 116, Num 49, pp 25840-25845, issn 1932-7447, 6 p.Article

Transition in the Molecular Orientation of Phenol Adsorbates on the Ge(100)-2 x 1 SurfaceSHONG, Bonggeun; BENT, Stacey F.Journal of physical chemistry. C. 2012, Vol 116, Num 14, pp 7925-7930, issn 1932-7447, 6 p.Article

Crystalline growth of germanium thin films on single crystal silicon substrates by solid phase crystallizationSUZUKI, Atsushi; ISOMURA, Masao.Journal of non-crystalline solids. 2012, Vol 358, Num 17, pp 2166-2170, issn 0022-3093, 5 p.Conference Paper

Impacts of AlGeO formation by post thermal oxidation of Al₂O₃/Ge structure on interfacial propertiesSHIBAYAMA, Shigehisa; KATO, Kimihiko; SAKASHITA, Mitsuo et al.Thin solid films. 2014, Vol 557, pp 282-287, issn 0040-6090, 6 p.Conference Paper

In-depth analysis of high-quality Ge-on-insulator structure formed by rapid-melting growthCHIKITA, H; MATSUMURA, R; TOJO, Y et al.Thin solid films. 2014, Vol 557, pp 139-142, issn 0040-6090, 4 p.Conference Paper

Influence of Ge substrate orientation on crystalline structures of Ge_1―xSn_x epitaxial layersASANO, Takanori; KIDOWAKI, Shohei; KUROSAWA, Masashi et al.Thin solid films. 2014, Vol 557, pp 159-163, issn 0040-6090, 5 p.Conference Paper

Exploring Azobenzenethiol Adsorption on the Ag/Ge(111) Surface with Surface Raman SpectroscopyLEE, Ya-Rong; SU, Yi-Hang; CHOU, Li-Wei et al.Journal of physical chemistry. C. 2013, Vol 117, Num 42, pp 21823-21831, issn 1932-7447, 9 p.Article

In Situ Spectroelectrochemical Investigation of Ge, Si, and Si_xGe_1―x Electrodeposition from an Ionic LiquidLAHIRI, Abhishek; OLSCHEWSKI, Mark; HÖFFT, Oliver et al.Journal of physical chemistry. C. 2013, Vol 117, Num 4, pp 1722-1727, issn 1932-7447, 6 p.Article

Atomically Controlled Epitaxial Growth of Single-Crystalline Germanium Films on a Metallic SilicideYAMADA, Shinya; TANIKAWA, Kohei; MIYAO, Masanobu et al.Crystal growth & design. 2012, Vol 12, Num 10, pp 4703-4707, issn 1528-7483, 5 p.Article

Growth of Ge_1―xSn_x heteroepitaxial layers with very high Sn contents on InP(001) substratesNAKAMURA, Marika; SHIMURA, Yosuke; TAKEUCHI, Shotaro et al.Thin solid films. 2012, Vol 520, Num 8, pp 3201-3205, issn 0040-6090, 5 p.Conference Paper

Liquid-Phase Adsorption of Sulfur on Germanium: Reaction Mechanism and Atomic GeometryFLEISCHMANN, Claudia; HOUSSA, Michel; MÜLLER, Matthias et al.Journal of physical chemistry. C. 2013, Vol 117, Num 15, pp 7451-7458, issn 1932-7447, 8 p.Article